 | |  | |
| PartNumber | SI4840BDY-T1-GE3 | SI4840BDY-T1-E3 | SI4840BDY-T1-E3-CUT TAPE |
| Description | MOSFET 40V Vds 20V Vgs SO-8 | MOSFET 40V Vds 20V Vgs SO-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI4 | SI4 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI4840BDY-GE3 | SI4840BDY-E3 | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 19 A | - |
| Rds On Drain Source Resistance | - | 9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 33 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 6 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 3.9 mm | - |
| Forward Transconductance Min | - | 56 S | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 30 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |