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| PartNumber | SI4599DY-T1-GE3 | SI4599DY-T1-GE3-CUT TAPE | SI4599DY |
| Description | MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 5.8 A, 6.8 A | - | - |
| Rds On Drain Source Resistance | 35.5 mOhms, 45 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V, 1.4 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 11.7 nC, 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3 W, 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 14 S, 22 S | - | - |
| Fall Time | 9 ns, 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 12 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns, 30 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 7 ns | - | - |
| Part # Aliases | SI4599DY-GE3 | - | - |
| Unit Weight | 0.019048 oz | - | - |