PartNumber | RYE002N05TCL | RYE002N05 | RYE002N05 TL |
Description | MOSFET 0.9V Drive Nch MOSFET | ||
Manufacturer | ROHM Semiconductor | ROHM | |
Product Category | MOSFET | FETs - Single | IC Chips |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-416-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 50 V | - | - |
Id Continuous Drain Current | 200 mA | - | - |
Rds On Drain Source Resistance | 9 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 150 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.7 mm | - | - |
Length | 1.6 mm | - | - |
Product | MOSFET | - | - |
Series | RYE002N05 | - | - |
Transistor Type | 1 N-channel | - | - |
Type | Power MOSFET | - | - |
Width | 0.8 mm | - | - |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | 200 mS | - | - |
Fall Time | 43 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 8 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 17 ns | - | - |
Typical Turn On Delay Time | 5 ns | - | - |
Part # Aliases | RYE002N05 | - | - |
Unit Weight | 0.000212 oz | - | - |