RS1G120MNTB vs RS1G120MN vs RS1G120NW TB

 
PartNumberRS1G120MNTBRS1G120MNRS1G120NW TB
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance20.7 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length5.8 mm--
ProductMOSFET--
Transistor Type1 N-channel--
TypePower MOSFET--
Width5 mm--
BrandROHM Semiconductor--
Forward Transconductance Min4 S--
Fall Time3.2 ns--
Product TypeMOSFET--
Rise Time4.3 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23.8 ns--
Typical Turn On Delay Time9.7 ns--
Part # AliasesRS1G120MN--
Unit Weight0.002490 oz--
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