 |  | | |
| PartNumber | RQ3E120ATTB | RQ3E120ASFU7TB | RQ3E120AT |
| Description | MOSFET PCH -30V -12A MIDDLE POWER | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | HSMT-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 39 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 61 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 62 nC | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 3 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 2.4 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 95 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 140 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Part # Aliases | RQ3E120AT | - | - |