RGTH60TS65GC11 vs RGTH60TS65DGC11 vs RGTH60TS65

 
PartNumberRGTH60TS65GC11RGTH60TS65DGC11RGTH60TS65
DescriptionIGBT Transistors 650V 30A IGBT Stop TrenchIGBT Transistors 650V 30A IGBT Stop Trench
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.6 V1.6 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C58 A58 A-
Pd Power Dissipation194 W194 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesRGTH60TS65RGTH60TS65-
PackagingTubeTube-
Continuous Collector Current Ic Max58 A58 A-
Operating Temperature Range- 40 C to + 175 C- 40 C to + 175 C-
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current30 A30 A-
Gate Emitter Leakage Current+/- 200 nA+/- 200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity450450-
SubcategoryIGBTsIGBTs-
Part # AliasesRGTH60TS65RGTH60TS65D-
Unit Weight0.070548 oz0.070548 oz-
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