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RGTH60TS65GC11

RGTH60TS65GC11
Mfr. #:
RGTH60TS65GC11
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors 650V 30A IGBT Stop Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGTH60TS65GC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RGTH60TS65GC11 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
58 A
Pd - Disipación de energía:
194 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RGTH60TS65
Embalaje:
Tubo
Corriente continua de colector Ic Max:
58 A
Rango de temperatura de funcionamiento:
- 40 C to + 175 C
Marca:
Semiconductor ROHM
Corriente continua del colector:
30 A
Corriente de fuga puerta-emisor:
+/- 200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
RGTH60TS65
Unidad de peso:
0.070548 oz
Tags
RGTH60TS, RGTH6, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 58A 194000mW 3-Pin(3+Tab) TO-247N Bulk
***i-Key
IGBT TRNCH FIELD 650V 58A TO247N
***ark
Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current:58A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:194W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***ark
650V/30A Fast Igbt Fsii To-247/Tube Rohs Compliant: Yes |Onsemi NGTB30N65IHL2WG
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
***ure Electronics
IXXH Series GenX4 650 V 65 A Flange Mount IGBT - TO-247AD
***el Electronic
IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
***i-Key
IGBT 650V 65A 230W TO247AD
***S
new, original packaged
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGTH60TS65G-C11
DISTI # C1S625901599668		ROHM SemiconductorUnclassified90
  • 50:$8.9600
  • 10:$9.3800
  • 5:$9.8500
RGTH60TS65GC11
DISTI # RGTH60TS65GC11-ND		ROHM SemiconductorIGBT 650V 58A 197W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		130In Stock
  • 2500:$1.5456
  • 1000:$1.6229
  • 500:$1.9243
  • 250:$2.1445
  • 100:$2.3764
  • 25:$2.6084
  • 10:$2.8980
  • 1:$3.2500
RGTH60TS65GC11
DISTI # RGTH60TS65GC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 58A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH60TS65GC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.6900
  • 900:$1.5900
  • 1800:$1.4900
  • 2700:$1.3900
  • 4500:$1.3900
RGTH60TS65GC11
DISTI # 755-RGTH60TS65GC11		ROHM SemiconductorIGBT Transistors 650V 30A IGBT Stop Trench
RoHS: Compliant		428
  • 1:$2.9300
  • 10:$2.4900
  • 100:$2.1600
  • 250:$2.0500
  • 500:$1.8400
  • 1000:$1.5500
  • 2500:$1.4700
  • 5000:$1.4200
RGTH60TS65GC11
DISTI # 1501468		ROHM SemiconductorIGBT N-CHANNEL 58A 650V TRENCH TO-247, PK25
  • 5:£2.2680
  • 25:£1.9960
  • 100:£1.7460
  • 250:£1.6320
  • 500:£1.5420
RGTH60TS65GC11ROHM Semiconductor 24
  • 22:$3.2800
  • 7:$3.6080
  • 1:$4.9200
RGTH60TS65GC11
DISTI # 2519795		ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3
RoHS: Compliant		32
  • 1:£2.3800
  • 10:£1.8000
  • 100:£1.5600
  • 250:£1.4700
  • 500:£1.3200
RGTH60TS65GC11ROHM SemiconductorIGBT Transistors 650V 30A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGTH60TS65GC11ROHM SemiconductorRoHS (ship within 1day)30
    • 1:$3.1300
    • 10:$2.5700
    • 50:$2.0700
    • 100:$1.7700
    • 500:$1.6800
    • 1000:$1.6400
    RGTH60TS65GC11
    DISTI # 2519795    		ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3
    RoHS: Compliant    		32
    • 1:$4.6500
    • 10:$3.9400
    • 100:$3.4300
    • 250:$3.2500
    • 500:$2.9100
    • 1000:$2.5800
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    OMO.#: OMO-ACSL-6400-06TE

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    OMO.#: OMO-964732-1

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    Mfr.#: SM8S17AHE3_A/I

    OMO.#: OMO-SM8S17AHE3-A-I-VISHAY

    		 TVS DIODE 17V 27.6V DO218AB
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    Mfr.#: SLSTK3401A

    OMO.#: OMO-SLSTK3401A-SILICON-LABS

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    Mfr.#: ACSL-6400-06TE

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    Disponibilidad
    Valores:
    423
    En orden:
    2406
    Ingrese la cantidad:
    El precio actual de RGTH60TS65GC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,93 US$
    2,93 US$
    10
    2,49 US$
    24,90 US$
    100
    2,16 US$
    216,00 US$
    250
    2,05 US$
    512,50 US$
    500
    1,84 US$
    920,00 US$
    1000
    1,55 US$
    1 550,00 US$
    2500
    1,47 US$
    3 675,00 US$
    5000
    1,42 US$
    7 100,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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