PartNumber | RDN100N20 | RDN100N20 10A 200V MOS | RDN100N20 YF54 |
Description | MOSFET Trans MOSFET N-CH 200V 10A 3-Pin(3+Tab) TO-220FN Bulk | ||
Manufacturer | ROHM Semiconductor | - | - |
Product Category | MOSFET | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 10 A | - | - |
Rds On Drain Source Resistance | 360 mOhms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 35 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Bulk | - | - |
Height | 8 mm | - | - |
Length | 10 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.5 mm | - | - |
Brand | ROHM Semiconductor | - | - |
Fall Time | 26 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 29 ns | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 38 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Part # Aliases | RDN100N20FU6 | - | - |
Unit Weight | 0.211644 oz | - | - |