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| PartNumber | QPD1010 | QPD1011SR | QPD1010-EVB1 |
| Description | RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN | RF JFET Transistors .03-1.2GHz 7W 50V GaN | RF Development Tools DC-4GHz 10W 28-50V Eval Board |
| Manufacturer | Qorvo | Qorvo | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN SiC | GaN SiC | - |
| Gain | 24.7 dB | 21 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 50 V | 50 V | - |
| Vgs Gate Source Breakdown Voltage | 145 V | 145 V | - |
| Id Continuous Drain Current | 400 mA | 1.46 A | - |
| Output Power | 11 W | 8.7 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Pd Power Dissipation | 13.5 W | 13 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | QFN-16 | SMD-8 | - |
| Packaging | Waffle | Reel | - |
| Configuration | Single | - | - |
| Operating Frequency | 4 GHz | 30 MHz to 1200 MHz | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | QPD1011 | - |
| Brand | Qorvo | Qorvo | - |
| Development Kit | QPD1010-EVB1 | QPD1011EVB01 | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 50 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
| Part # Aliases | 1132873 | QPD1011 | - |
| Unit Weight | 0.081130 oz | - | - |
| Maximum Drain Gate Voltage | - | 55 V | - |
| Forward Transconductance Min | - | - | - |