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QPD1010

QPD1010
Mfr. #:
QPD1010
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
QPD1010 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
QPD1010 más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
24.7 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
50 V
Vgs - Voltaje de ruptura de puerta-fuente:
145 V
Id - Corriente de drenaje continua:
400 mA
Potencia de salida:
11 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Pd - Disipación de energía:
13.5 W
Estilo de montaje:
SMD / SMT
Paquete / Caja:
QFN-16
Embalaje:
Gofre
Configuración:
Único
Frecuencia de operación:
4 GHz
Rango de temperatura de funcionamiento:
- 40 C to + 85 C
Serie:
QPD
Marca:
Qorvo
Kit de desarrollo:
QPD1010-EVB1
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
50
Subcategoría:
Transistores
Vgs th - Voltaje umbral puerta-fuente:
- 2.8 V
Parte # Alias:
1132873
Unidad de peso:
0.081130 oz
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN
QPD1009 & QPD1010 GaN RF Transistors
Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Parte # Mfg. Descripción Valores Precio
QPD1010
DISTI # 772-QPD1010		QorvoRF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
RoHS: Compliant		40
  • 1:$20.5500
  • 25:$17.7700
  • 100:$15.3700
  • 250:$14.3000
  • 500:$13.3000
QPD1010-EVB1
DISTI # 772-QPD1010-EVB1		QorvoRF Development Tools DC-4GHz 10W 28-50V Eval Board
RoHS: Compliant		3
  • 1:$875.0000
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 RF Development Tools OBSTACLE DETECTION SENSOR USING 1642
QPD1010-EVB1

Mfr.#: QPD1010-EVB1

OMO.#: OMO-QPD1010-EVB1-1152

 RF Development Tools DC-4GHz 10W 28-50V Eval Board
Disponibilidad
Valores:
25
En orden:
2008
Ingrese la cantidad:
El precio actual de QPD1010 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
20,55 US$
20,55 US$
25
17,77 US$
444,25 US$
100
15,37 US$
1 537,00 US$
250
14,30 US$
3 575,00 US$
500
13,30 US$
6 650,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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