QH8MA2TCR vs QH8MA2 vs QH8MA3

 
PartNumberQH8MA2TCRQH8MA2QH8MA3
DescriptionMOSFET 30V Nch+Pch Power MOSFET
ManufacturerROHM Semiconductor-Rohm Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.5 A, 3 A--
Rds On Drain Source Resistance25 mOhms, 55 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.4 nC, 7.8 nC--
Minimum Operating Temperature---
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR Alternate Packaging
Transistor Type1 N-Channel, 1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min1.4 S, 1.9 S--
Fall Time5.7 ns, 8.5 ns--
Product TypeMOSFET--
Rise Time8 ns, 16.8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns, 27.6 ns--
Typical Turn On Delay Time7.2 ns, 7.9 ns--
Part # AliasesQH8MA2--
Series--QH8MA3
Package Case--8-SMD, Flat Lead
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--TSMT8
FET Type--N and P-Channel
Power Max--1.5W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--300pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--7A, 5.5A
Rds On Max Id Vgs--29 mOhm @ 7A, 10V
Vgs th Max Id--2.5V @ 1mA
Gate Charge Qg Vgs--7.2nC @ 10V
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