PMDPB85UPE,115 vs PMDPB80XP,115 vs PMDPB85UPE

 
PartNumberPMDPB85UPE,115PMDPB80XP,115PMDPB85UPE
DescriptionMOSFET PMDPB85UPE/HUSON6/REEL 7" Q1/TMOSFET 20V, Dual P-Channel Trench MOSFET
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-2020-6DFN-2020-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.7 A3.7 A-
Rds On Drain Source Resistance82 mOhms, 82 mOhms80 mOhms-
Vgs th Gate Source Threshold Voltage950 mV600 mV-
Vgs Gate Source Voltage8 V--
Qg Gate Charge8.1 nC, 8.1 nC5.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.17 W6.25 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReelDigi-ReelR Alternate Packaging
Transistor Type2 P-Channel2 P-Channel-
BrandNexperiaNexperia-
Forward Transconductance Min6 S, 6 S--
Fall Time21 ns, 21 ns50 ns-
Product TypeMOSFETMOSFET-
Rise Time12 ns14 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time47 ns, 47 ns120 ns-
Typical Turn On Delay Time6 ns, 6 ns6 ns-
Series---
Package Case--6-UDFN Exposed Pad
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--6-HUSON (2x2)
FET Type--2 P-Channel (Dual)
Power Max--515mW
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--514pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.9A
Rds On Max Id Vgs--103 mOhm @ 1.3A, 4.5V
Vgs th Max Id--950mV @ 250μA
Gate Charge Qg Vgs--8.1nC @ 4.5V
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