NTUD3127CT5G vs NTUD3127 vs NTUD3128CT5G

 
PartNumberNTUD3127CT5GNTUD3127NTUD3128CT5G
DescriptionMOSFET ZEN REG 0.5W 2.5V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-963-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance3 mOhms, 5 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height0.37 mm--
Length1 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel, 1 P-Channel--
Width0.8 mm--
BrandON Semiconductor--
Forward Transconductance Min350 mS, 260 mS--
Fall Time60 nS, 97 nS--
Product TypeMOSFET--
Rise Time24 nS, 37 nS--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 nS, 112 nS--
Typical Turn On Delay Time15 nS, 20 nS--
Series---
Package Case-SOT-963-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-963-
FET Type-N and P-Channel-
Power Max-125mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-9pF @ 15V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-160mA, 140mA-
Rds On Max Id Vgs-3 Ohm @ 100mA, 4.5V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs---
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