NTHD4N02FT1G vs NTHD4N02FT1 vs NTHD4N02FT1 , FLZ33VD

 
PartNumberNTHD4N02FT1GNTHD4N02FT1NTHD4N02FT1 , FLZ33VD
DescriptionMOSFET 20V 3.9A N-Channel w/3.7A SchottkyMOSFET 20V 3.9A N-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseChipFET-8ChipFET-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.9 A3.9 A-
Rds On Drain Source Resistance80 mOhms80 mOhms-
Vgs Gate Source Voltage12 V12 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation910 mW910 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.05 mm1.05 mm-
Length3.05 mm3.05 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width1.65 mm1.65 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min6 S6 S-
Fall Time9 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns10 ns-
Typical Turn On Delay Time5 ns5 ns-
Unit Weight0.002998 oz0.002998 oz-
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