NP60N04MUG-S18-AY vs NP60N04MUG vs NP60N04MUK

 
PartNumberNP60N04MUG-S18-AYNP60N04MUGNP60N04MUK
DescriptionMOSFET POWER MOSFET TRANSISTOR
ManufacturerRenesas Electronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance6.3 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation1800 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandRenesas Electronics--
Fall Time10 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity900--
SubcategoryMOSFETs--
Typical Turn Off Delay Time48 ns--
Typical Turn On Delay Time21 ns--
Unit Weight0.063493 oz--
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