PartNumber | NE3515S02-T1C-A | NE3515S02-A | NE3515S02 |
Description | RF JFET Transistors Super Low Noise Pseudomorphic | RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH | |
Manufacturer | CEL | CEL | - |
Product Category | RF JFET Transistors | RF JFET Transistors | - |
RoHS | Y | Y | - |
Transistor Type | pHEMT | pHEMT | - |
Technology | GaAs | GaAs | - |
Gain | 12.5 dB | 12.5 dB | - |
Vds Drain Source Breakdown Voltage | 4 V | 4 V | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - 3 V | - |
Id Continuous Drain Current | 88 mA | 88 mA | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Pd Power Dissipation | 165 mW | 165 mW | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | S0-2 | S0-2 | - |
Packaging | Reel | Cut Tape | - |
Operating Frequency | 12 GHz | 12 GHz | - |
Product | RF JFET | RF JFET | - |
Type | GaAs pHEMT | GaAs pHEMT | - |
Brand | CEL | CEL | - |
Forward Transconductance Min | 70 mS | 70 mS | - |
NF Noise Figure | 0.3 dB | 0.3 dB | - |
P1dB Compression Point | 14 dBm | 14 dBm | - |
Product Type | RF JFET Transistors | RF JFET Transistors | - |
Factory Pack Quantity | 2000 | 1 | - |
Subcategory | Transistors | Transistors | - |