MMRF1312HSR5 vs MMRF1312GSR5 vs MMRF1312HR5


PartNumber	MMRF1312HSR5	MMRF1312GSR5	MMRF1312HR5
Description	RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V	RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V	RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Manufacturer	NXP	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Transistor Polarity	N-Channel	N-Channel	N-Channel
Technology	Si	Si	Si
Id Continuous Drain Current	2.6 A	2.6 A	2.6 A
Vds Drain Source Breakdown Voltage	- 500 mV, 112 V	- 500 mV, 112 V	- 500 mV, 112 V
Gain	19.6 dB	19.6 dB	19.6 dB
Output Power	1 kW	1 kW	1 kW
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	NI-1230S-4S-4	NI-1230GS-4L-4	NI-1230H-4S-4
Packaging	Reel	Reel	Reel
Operating Frequency	900 MHz to 1.215 GHz	900 MHz to 1.215 GHz	900 MHz to 1.215 GHz
Type	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Brand	NXP / Freescale	NXP / Freescale	NXP / Freescale
Number of Channels	2 Channel	2 Channel	2 Channel
Pd Power Dissipation	1.053 kW	1.053 kW	1.053 kW
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	50	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Vgs Gate Source Voltage	- 6 V, 10 V	- 6 V, 10 V	- 6 V, 10 V
Vgs th Gate Source Threshold Voltage	1.8 V	1.8 V	1.8 V
Part # Aliases	935316061178	935320794178	935316216178
Unit Weight	0.300472 oz	0.300472 oz	0.465355 oz