MMBF170Q-13-F vs MMBF170Q vs MMBF170Q-7

 
PartNumberMMBF170Q-13-FMMBF170QMMBF170Q-7
DescriptionMOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage70 V--
Id Continuous Drain Current500 mA--
Rds On Drain Source Resistance5.3 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height1 mm--
Length2.9 mm--
SeriesMMBF170--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Forward Transconductance Min80 mS--
Product TypeMOSFET--
Factory Pack Quantity10000--
SubcategoryMOSFETs--
Unit Weight0.000282 oz--
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