MJW21192 vs MJW21191 vs MJW21191G

 
PartNumberMJW21192MJW21191MJW21191G
DescriptionBipolar Transistors - BJT 8A 150V 100W NPNBipolar Transistors - BJT 8A 150V 100W PNPTRANS PNP 150V 8A TO-247
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Transistor PolarityNPNPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max150 V150 V-
Collector Base Voltage VCBO150 V150 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage2 V2 V-
Maximum DC Collector Current8 A8 A-
Gain Bandwidth Product fT4 MHz40 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height21.08 mm (Max)21.08 mm (Max)-
Length16.26 mm (Max)16.26 mm (Max)-
PackagingTubeTube-
Width5.3 mm (Max)5.3 mm (Max)-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current8 A8 A-
DC Collector/Base Gain hfe Min1515-
Pd Power Dissipation125 W125 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity3030-
SubcategoryTransistorsTransistors-
Unit Weight1.340411 oz1.340411 oz-
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