MJE5730G vs MJE5731 vs MJE5730


PartNumber	MJE5730G	MJE5731	MJE5730
Description	Bipolar Transistors - BJT 1A 300V 40W PNP	Bipolar Transistors - BJT 1A 350V 40W PNP	Bipolar Transistors - BJT 1A 300V 40W PNP
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	N	N
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Transistor Polarity	PNP	PNP	PNP
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	300 V	350 V	300 V
Collector Base Voltage VCBO	300 V	350 V	300 V
Emitter Base Voltage VEBO	5 V	5 V	5 V
Collector Emitter Saturation Voltage	1 V	1 V	1 V
Maximum DC Collector Current	1 A	1 A	1 A
Gain Bandwidth Product fT	10 MHz	10 MHz	10 MHz
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	MJE5730	-	-
Height	15.75 mm	9.28 mm (Max)	9.28 mm (Max)
Length	10.53 mm	10.28 mm (Max)	10.28 mm (Max)
Packaging	Tube	Tube	Tube
Width	4.83 mm	4.82 mm (Max)	4.82 mm (Max)
Brand	ON Semiconductor	ON Semiconductor	ON Semiconductor
Continuous Collector Current	1 A	1 A	1 A
DC Collector/Base Gain hfe Min	30	30	30
Pd Power Dissipation	40 W	40 W	40 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	50	50	50
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.211644 oz	0.211644 oz	0.211644 oz