PartNumber | IXTY01N100D-TRL | IXTY01N100D | IXTY01N100D TR |
Description | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET N-CH 1000V 0.1A TO-252AA | IXTY01N100D TR |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | FETs - Single | - |
RoHS | Y | - | - |
Product | Power MOSFET Modules | - | - |
Type | High Voltage | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Reel | Bulk | - |
Configuration | Single | - | - |
Brand | IXYS | - | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 64 ns | - | - |
Id Continuous Drain Current | 400 mA | - | - |
Pd Power Dissipation | 25 W | - | - |
Product Type | Discrete Semiconductor Modules | - | - |
Rds On Drain Source Resistance | 80 Ohms | - | - |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | Discrete Semiconductor Modules | - | - |
Typical Turn Off Delay Time | 34 ns | - | - |
Typical Turn On Delay Time | 7 ns | - | - |
Vds Drain Source Breakdown Voltage | 1000 V | - | - |
Vgs th Gate Source Threshold Voltage | - 4.5 V | - | - |
Series | - | 319 | - |
Part Status | - | Active | - |
Connector Type | - | Mating Target | - |
Number of Contacts | - | 62 | - |
Pitch | - | 0.100" (2.54mm) | - |
Number of Rows | - | 1 | - |
Row Spacing | - | - | - |
Mounting Type | - | Through Hole | - |
Material | - | Brass Alloy | - |
Contact Finish | - | Gold | - |
Contact Finish Thickness | - | 10in (0.25m) | - |