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| PartNumber | IXTH360N055T2 | IXTH36N50P | IXTH36N20T |
| Description | MOSFET 360Amps 55V | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | MOSFET 36 Amps 200V 60 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 500 V | 200 V |
| Id Continuous Drain Current | 360 A | 36 A | 36 A |
| Rds On Drain Source Resistance | 2.4 mOhms | 170 mOhms | 60 Ohms |
| Tradename | HiPerFET | PolarHV | - |
| Packaging | Tube | Tube | Tube |
| Series | IXTH360N055 | IXTH36N50 | IXTH36N20 |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 85 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 540 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | PolarHV Power MOSFET | - |
| Width | - | 5.3 mm | - |
| Forward Transconductance Min | - | 23 S | - |
| Fall Time | - | 21 ns | - |
| Rise Time | - | 27 ns | - |
| Typical Turn Off Delay Time | - | 75 ns | - |
| Typical Turn On Delay Time | - | 25 ns | - |