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IXTH36N20T

IXTH36N20T
Mfr. #:
IXTH36N20T
Fabricante:
Littelfuse
Descripción:
MOSFET 36 Amps 200V 60 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH36N20T Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
36 A
Rds On - Resistencia de la fuente de drenaje:
60 Ohms
Embalaje:
Tubo
Serie:
IXTH36N20
Marca:
IXYS
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Unidad de peso:
0.229281 oz
Tags
IXTH36, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET N-CH 200V 36A TO-247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
***el Electronic
INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
***roFlash
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ure Electronics
Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC
***nell
MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214
*** Electronics
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS
***(Formerly Allied Electronics)
MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free
***ure Electronics
Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
IXTH36N20T
DISTI # IXTH36N20T-ND		IXYS CorporationMOSFET N-CH 200V 36A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$2.7473
IXTH36N20T
DISTI # 747-IXTH36N20T		IXYS CorporationMOSFET 36 Amps 200V 60 Rds
RoHS: Compliant		0
  • 1:$3.5700
  • 10:$3.1900
  • 25:$2.7800
  • 50:$2.7200
  • 100:$2.6200
  • 250:$2.2300
  • 500:$2.1200
  • 1000:$1.7900
  • 2500:$1.5300
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IXTH36P15P

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IXTH360N055T2

Mfr.#: IXTH360N055T2

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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTH36N20T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,57 US$
3,57 US$
10
3,19 US$
31,90 US$
25
2,78 US$
69,50 US$
50
2,72 US$
136,00 US$
100
2,62 US$
262,00 US$
250
2,23 US$
557,50 US$
500
2,12 US$
1 060,00 US$
1000
1,79 US$
1 790,00 US$
2500
1,53 US$
3 825,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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