 |  | | |
| PartNumber | IXTA200N055T2-7 | IXTA200N055T2 | IXTA200N055T2-TRL |
| Description | MOSFET DISCMSFT NCHTRENCHGATE-GEN2 | MOSFET 200 Amps 55V 0.0042 Rds | MOSFET IXTA200N055T2 TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Tradename | TrenchT2 | HiPerFET | TrenchT2 |
| Packaging | Tube | Tube | Reel |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TO-263-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 200 A | - |
| Rds On Drain Source Resistance | - | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 109 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 360 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 4.83 mm | - |
| Length | - | 9.65 mm | - |
| Series | - | IXTA200N055 | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | TrenchT2 Power MOSFET | - |
| Width | - | 10.41 mm | - |
| Forward Transconductance Min | - | 50 S | - |
| Fall Time | - | 27 ns | - |
| Rise Time | - | 22 ns | - |
| Typical Turn Off Delay Time | - | 49 ns | - |
| Typical Turn On Delay Time | - | 26 ns | - |
| Unit Weight | - | 0.056438 oz | - |