IXDH20N120 vs IXDH20N120D1 vs IXDH20N120D

 
PartNumberIXDH20N120IXDH20N120D1IXDH20N120D
DescriptionIGBT Transistors 20 Amps 1200VIGBT Transistors 20 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1.2 kV-
Collector Emitter Saturation Voltage2.4 V2.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXDH20N120IXDH20N120-
PackagingTubeTube-
Continuous Collector Current Ic Max38 A50 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Continuous Collector Current38 A38 A-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz-
Continuous Collector Current at 25 C-38 A-
Pd Power Dissipation-200 W-
Operating Temperature Range-- 55 C to + 150 C-
Gate Emitter Leakage Current-500 nA-
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