PartNumber | IXDH20N120 | IXDH20N120D1 | IXDH20N120D |
Description | IGBT Transistors 20 Amps 1200V | IGBT Transistors 20 Amps 1200V | |
Manufacturer | IXYS | IXYS | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1.2 kV | - |
Collector Emitter Saturation Voltage | 2.4 V | 2.4 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | IXDH20N120 | IXDH20N120 | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 38 A | 50 A | - |
Height | 21.46 mm | 21.46 mm | - |
Length | 16.26 mm | 16.26 mm | - |
Width | 5.3 mm | 5.3 mm | - |
Brand | IXYS | IXYS | - |
Continuous Collector Current | 38 A | 38 A | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | IGBTs | IGBTs | - |
Unit Weight | 0.229281 oz | 0.229281 oz | - |
Continuous Collector Current at 25 C | - | 38 A | - |
Pd Power Dissipation | - | 200 W | - |
Operating Temperature Range | - | - 55 C to + 150 C | - |
Gate Emitter Leakage Current | - | 500 nA | - |