 |  |  | |
| PartNumber | IRF6691TR1 | IRF6691TRPBF. | IRF6691TR1PBF |
| Description | MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC | MOSFET N-CH 20V 32A DIRECTFET | |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | IC Chips |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-MT | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Rds On Drain Source Resistance | 1.8 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 47 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET plus Schottky Diode | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 10 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 95 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Part # Aliases | SP001530888 | - | - |
| Unit Weight | 0.017637 oz | - | - |