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| PartNumber | IRF6609TR1 | IRF6609TR1PBF | IRF6609TRPBF |
| Description | MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC | MOSFET 20V N-CH HEXFET 2mOhms 46nC | MOSFET 20V N-CH HEXFET 2mOhms 46nC |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | N | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-MT | DirectFET-MT | DirectFET-MT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 31 A | 31 A | 31 A |
| Rds On Drain Source Resistance | 2.6 mOhms | 2.6 mOhms | 2.6 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 46 nC | 46 nC | 46 nC |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 89 W | 89 W | 89 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.7 mm | 0.7 mm | 0.7 mm |
| Length | 6.35 mm | 6.35 mm | 6.35 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - | - |
| Width | 5.05 mm | 5.05 mm | 5.05 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Fall Time | 9.8 ns | - | - |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 95 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | 4800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | SP001529252 | SP001532204 | SP001527932 |
| Unit Weight | 0.035274 oz | - | - |