 | |  | |
| PartNumber | IPW60R120C7XKSA1 | IPW60R120P7XKSA1 | IPW60R120C7 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS C7 | CoolMOS P7 | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 240 | 240 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPW60R120C7 SP001385060 | IPW60R120P7 SP001658382 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 26 A | - |
| Rds On Drain Source Resistance | - | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 36 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 95 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 6 ns | - |
| Rise Time | - | 14 ns | - |
| Typical Turn Off Delay Time | - | 81 ns | - |
| Typical Turn On Delay Time | - | 21 ns | - |