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IPW60R120P7XKSA1

IPW60R120P7XKSA1
Mfr. #:
IPW60R120P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW60R120P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
26 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
36 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
95 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
81 ns
Tiempo típico de retardo de encendido:
21 ns
Parte # Alias:
IPW60R120P7 SP001658382
Unidad de peso:
0.211644 oz
Tags
IPW60R120, IPW60R12, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - TO-247-3
***et
Trans MOSFET N-CH 650V 26A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 600V 26A TO247-3
***ronik
N-CH 650V 78A 120mOhm TO247-3
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 26A, 95W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 26A, 95W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:95W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 26A, 95W, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:26A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:95W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Parte # Mfg. Descripción Valores Precio
IPW60R120P7XKSA1
DISTI # V36:1790_18196279		Infineon Technologies AGIPW60R120P7XKSA10
    IPW60R120P7XKSA1
    DISTI # IPW60R120P7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 26A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 2640:$2.0413
    • 720:$2.5415
    • 240:$2.9855
    • 25:$3.4448
    • 10:$3.6440
    • 1:$4.0600
    IPW60R120P7XKSA1
    DISTI # IPW60R120P7XKSA1    		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R120P7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$1.7900
    • 2400:$1.7900
    • 960:$1.8900
    • 480:$1.9900
    • 240:$2.0900
    IPW60R120P7XKSA1
    DISTI # 93AC7141    		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 95W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes100
    • 500:$2.4400
    • 250:$2.7200
    • 100:$2.8700
    • 50:$3.0200
    • 25:$3.1600
    • 10:$3.3100
    • 1:$3.9000
    IPW60R120P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - TO-247-3
    RoHS: Not Compliant    		240Tube
    • 240:$1.8900
    IPW60R120P7XKSA1
    DISTI # 726-IPW60R120P7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		474
    • 1:$3.8600
    • 10:$3.2800
    • 100:$2.8400
    • 250:$2.6900
    • 500:$2.4200
    • 1000:$2.0400
    • 2500:$1.9400
    IPW60R120P7XKSA1
    DISTI # 2986489    		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 95W, TO-247
    RoHS: Compliant    		320
    • 500:$2.9200
    • 250:$3.2200
    • 100:$3.3900
    • 10:$3.8700
    • 1:$4.9500
    IPW60R120P7XKSA1
    DISTI # 2986489    		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 95W, TO-247322
    • 100:£2.6200
    • 10:£3.0100
    • 1:£3.9800
    IPW60R120P7XKSA1
    DISTI # XSFP00000111482    		Infineon Technologies AG 
    RoHS: Compliant    		480 in Stock0 on Order
    • 480:$3.4400
    • 240:$3.7800
    Imagen Parte # Descripción
    UCC27712DR

    Mfr.#: UCC27712DR

    OMO.#: OMO-UCC27712DR

    		 Gate Drivers 700V GATE DRIVER
    VS-MUR1520-M3

    Mfr.#: VS-MUR1520-M3

    OMO.#: OMO-VS-MUR1520-M3

    		 Rectifiers 200V 15A TO-220 Fred Pt
    IPD60R170CFD7ATMA1

    Mfr.#: IPD60R170CFD7ATMA1

    OMO.#: OMO-IPD60R170CFD7ATMA1

    		 MOSFET HIGH POWER_NEW
    IPW60R125CFD7XKSA1

    Mfr.#: IPW60R125CFD7XKSA1

    OMO.#: OMO-IPW60R125CFD7XKSA1

    		 MOSFET HIGH POWER_NEW
    FCP125N65S3R0

    Mfr.#: FCP125N65S3R0

    OMO.#: OMO-FCP125N65S3R0

    		 MOSFET SUPERFET3 650V 24A 125 mOhm
    S1812R-333K

    Mfr.#: S1812R-333K

    OMO.#: OMO-S1812R-333K

    		 Fixed Inductors 33uH 10%
    VS-MUR1520-M3

    Mfr.#: VS-MUR1520-M3

    OMO.#: OMO-VS-MUR1520-M3-VISHAY

    		 DIODE FRED 200V 15A TO220AB
    IPW60R125CFD7XKSA1

    Mfr.#: IPW60R125CFD7XKSA1

    OMO.#: OMO-IPW60R125CFD7XKSA1-INFINEON-TECHNOLOGIES

    		 HIGH POWER_NEW
    S1812R-333K

    Mfr.#: S1812R-333K

    OMO.#: OMO-S1812R-333K-API-DELEVAN

    		 Fixed Inductors 33uH 10%
    UCC27712DR

    Mfr.#: UCC27712DR

    OMO.#: OMO-UCC27712DR-TEXAS-INSTRUMENTS

    		 700V GATE DRIVER
    Disponibilidad
    Valores:
    470
    En orden:
    2453
    Ingrese la cantidad:
    El precio actual de IPW60R120P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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