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| PartNumber | IPP041N12N3 G | IPP041N12N3GXK | IPP041N12N3G(041N12N) |
| Description | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | 120 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms | 3.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 211 nC | 211 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | OptiMOS 3 Power-Transistor | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 83 S | 83 S | - |
| Fall Time | 21 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 52 ns | 52 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 70 ns | 70 ns | - |
| Typical Turn On Delay Time | 35 ns | 35 ns | - |
| Part # Aliases | IPP041N12N3GXKSA1 IPP41N12N3GXK SP000652746 | G IPP041N12N3 IPP041N12N3GXKSA1 SP000652746 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |