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| PartNumber | IPI60R280C6 | IPI60R250CPAKSA1 | IPI60R250CP |
| Description | MOSFET N-Ch 650V 13.8A I2PAK-3 CoolMOS C6 | MOSFET N-Ch 650V 12A I2PAK-3 | Trans MOSFET N-CH 600V 12A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R250CP) |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 13.8 A | 12 A | - |
| Rds On Drain Source Resistance | 280 mOhms | 250 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Qg Gate Charge | 43 nC | 26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 104 W | 104 W | - |
| Configuration | Single | Single | Single |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | CoolMOS C6 | XPI60R250 | XPI60R250 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 12 nS | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 17 ns | 17 ns |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 100 nS | 110 ns | 110 ns |
| Part # Aliases | IPI60R280C6XKSA1 IPI6R28C6XK SP000687554 | IPI60R250CP SP000358141 | - |
| Unit Weight | 0.084199 oz | 0.073511 oz | 0.073511 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Typical Turn On Delay Time | - | 40 ns | 40 ns |
| Part Aliases | - | - | IPI60R250CP SP000358141 |
| Package Case | - | - | TO-262-3 |
| Pd Power Dissipation | - | - | 104 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 250 mOhms |
| Qg Gate Charge | - | - | 26 nC |