IPI60R165CPXKSA1 vs IPI60R165CPAKSA1 vs IPI60R165CP

 
PartNumberIPI60R165CPXKSA1IPI60R165CPAKSA1IPI60R165CP
DescriptionMOSFET N-Ch 650V 21A I2PAK-3MOSFET HIGH POWER_LEGACYRF Bipolar Transistors MOSFET N-Ch 600V 21A I2PAK-3 CoolMOS CP
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance165 mOhms--
ConfigurationSingle-Single
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesCoolMOS CE-CoolMOS CP
Transistor Type1 N-Channel-1 N-Channel
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPI60R165CP SP000680744IPI6R165CPXK SP000276736-
Unit Weight0.073511 oz0.084199 oz0.084199 oz
Part Aliases--IPI60R165CPAKSA1 IPI60R165CPXKSA1 SP000680744
Package Case--I2PAK-3
Pd Power Dissipation--192 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--5 ns
Rise Time--5 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--21 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--165 mOhms
Typical Turn Off Delay Time--50 ns
Typical Turn On Delay Time--12 ns
Channel Mode--Enhancement
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