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IPI60R165CPXKSA1

IPI60R165CPXKSA1
Mfr. #:
IPI60R165CPXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 650V 21A I2PAK-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPI60R165CPXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
165 mOhms
Configuración:
Único
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
9.45 mm
Longitud:
10.2 mm
Serie:
CoolMOS CE
Tipo de transistor:
1 N-Channel
Ancho:
4.5 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
IPI60R165CP SP000680744
Unidad de peso:
0.073511 oz
Tags
IPI60R16, IPI60R1, IPI60R, IPI60, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 21A 3-Pin TO-262 Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:21A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-262; Power Dissipation Pd:192W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***et
Power Transistor, Cool MOS, 650V, 20.7A, 3-pin TO-262
***or
N-CHANNEL POWER MOSFET
***et
Trans MOSFET N-CH 650V 38A 3-Pin TO-262 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO262-3-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAK package
***ark
Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.19Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-262 Tube
***el Electronic
Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 104W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in I2PAK package
***ark
Power MOSFET, N Channel, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
***el Electronic
FPGA Arria® II GX Family 89178 Cells 500MHz 40nm Technology 0.9V 780-Pin FC-FBGA
***r Electronics
Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 650V, 17A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) I2PAK Tube
***icroelectronics SCT
Power MOSFETs, 650V, 12A, I2PAK, Tube
***et
Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-262
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:550V; Current, Id Cont:23A; On State Resistance:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***et
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262
***ponent Stockers USA
22.4 A 650 V 0.15 ohm N-CHANNEL Si POWER MOSFET TO-262AA
*** Electronic Components
RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
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COOLMOS N-CHANNEL POWER MOSFET
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***icroelectronics
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
***et
Trans MOSFET N-CH 650V 24A 3-Pin I2PAK Tube
***r Electronics
Power Field-Effect Transistor, 24A I(D), 650V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***el Electronic
IC CODEC VIDEO DSP/SRL 120LQFP
***icroelectronics SCT
Power MOSFETs, 650V, 24A, I2PAK, Tube
***icroelectronics
N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in I2PAKFP package
***r Electronics
Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) I2PAKFP Tube
***S
French Electronic Distributor since 1988
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:25A; On State Resistance:0.125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-262; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
***et
Trans MOSFET N-CH 600V 26A 3-Pin I2PAK Tube
***el Electronic
IC GATE NOR 4CH 2-INP 14-TSSOP
***icroelectronics SCT
Power MOSFETs, 600V, 26A, I2PAK, Tube
Parte # Mfg. Descripción Valores Precio
IPI60R165CPXKSA1
DISTI # IPI60R165CPXKSA1-ND		Infineon Technologies AGHIGH POWER_LEGACY
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$2.9262
IPI60R165CPXKSA1
DISTI # IPI60R165CPXKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI60R165CPXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$2.2900
  • 1000:$2.1900
  • 2000:$2.0900
  • 3000:$1.9900
  • 5000:$1.9900
IPI60R165CPXKSA1
DISTI # 726-IPI60R165CPXKSA1		Infineon Technologies AGMOSFET N-Ch 650V 21A I2PAK-3
RoHS: Compliant		0
    Imagen Parte # Descripción
    IPI60R165CPXKSA1

    Mfr.#: IPI60R165CPXKSA1

    OMO.#: OMO-IPI60R165CPXKSA1

    		 MOSFET N-Ch 650V 21A I2PAK-3
    IPI60R165CPAKSA1

    Mfr.#: IPI60R165CPAKSA1

    OMO.#: OMO-IPI60R165CPAKSA1

    		 MOSFET HIGH POWER_LEGACY
    IPI60R165CPAKSA1

    Mfr.#: IPI60R165CPAKSA1

    OMO.#: OMO-IPI60R165CPAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 21A TO-262
    IPI60R165CPXKSA1

    Mfr.#: IPI60R165CPXKSA1

    OMO.#: OMO-IPI60R165CPXKSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 21A I2PAK-3
    IPI60R165CP

    Mfr.#: IPI60R165CP

    OMO.#: OMO-IPI60R165CP-317

    		 RF Bipolar Transistors MOSFET N-Ch 600V 21A I2PAK-3 CoolMOS CP
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de IPI60R165CPXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,24 US$
    4,24 US$
    10
    3,60 US$
    36,00 US$
    100
    3,12 US$
    312,00 US$
    250
    2,96 US$
    740,00 US$
    500
    2,66 US$
    1 330,00 US$
    1000
    2,24 US$
    2 240,00 US$
    2500
    2,13 US$
    5 325,00 US$
    5000
    2,05 US$
    10 250,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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