 |  | | |
| PartNumber | IPB60R210CFD7ATMA1 | IPB60R230P6ATMA1 | IPB60R250CP |
| Description | MOSFET | MOSFET N-CH 600V 16.8A 3TO263 | Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Packaging | Reel | - | Reel |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPB60R210CFD7 SP002621142 | - | - |
| Series | - | - | CoolMOS CP |
| Part Aliases | - | - | IPB60R250CPATMA1 IPB60R250CPXT SP000358140 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 104 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 17 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 250 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 110 ns |
| Typical Turn On Delay Time | - | - | 40 ns |
| Channel Mode | - | - | Enhancement |