IPB60R250CP

IPB60R250CP
Mfr. #:
IPB60R250CP
Fabricante:
Rochester Electronics, LLC
Descripción:
Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB60R250CP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
CoolMOS CP
embalaje
Carrete
Alias ​​de parte
IPB60R250CPATMA1 IPB60R250CPXT SP000358140
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
104 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
17 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
12 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
250 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
110 ns
Tiempo de retardo de encendido típico
40 ns
Modo de canal
Mejora
Tags
IPB60R2, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R
***o-Tech
MOSFET N-Channel 600V 12A CoolMOS3 TO263
***i-Key
MOSFET N-CH 650V 12A TO263-3
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Parte # Mfg. Descripción Valores Precio
IPB60R250CPATMA1
DISTI # IPB60R250CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 12A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB60R250CP
    DISTI # IPB60R250CP
    Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: IPB60R250CP)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Asia - 1000
      IPB60R250CP
      DISTI # SP000358140
      Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: SP000358140)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Europe - 0
      • 1000:€1.9900
      • 2000:€1.4900
      • 4000:€1.3900
      • 6000:€1.3900
      • 10000:€1.2900
      IPB60R250CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      44770
      • 1000:$1.6800
      • 500:$1.7700
      • 100:$1.8400
      • 25:$1.9200
      • 1:$2.0600
      IPB60R250CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      35000
      • 1000:$2.1800
      • 500:$2.2900
      • 100:$2.3900
      • 25:$2.4900
      • 1:$2.6800
      IPB60R250CP
      DISTI # 726-IPB60R250CP
      Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      449
      • 1:$3.3200
      • 10:$2.6700
      • 100:$2.4300
      • 250:$2.1900
      • 500:$1.9700
      • 1000:$1.6500
      • 2000:$1.5700
      • 5000:$1.4400
      IPB60R250CPATMA1
      DISTI # 726-IPB60R250CPATMA1
      Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      0
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        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de IPB60R250CP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,16 US$
        2,16 US$
        10
        2,05 US$
        20,52 US$
        100
        1,94 US$
        194,40 US$
        500
        1,84 US$
        918,00 US$
        1000
        1,73 US$
        1 728,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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