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| PartNumber | IPB45N04S4L-08 | IPB45N04S4L08ATMA1 | IPB45N06 |
| Description | MOSFET N-Ch 40V 45A D2PAK-2 OptiMOS-T2 | MOSFET N-CH 40V 45A TO263-3-2 | |
| Manufacturer | Infineon Technologies | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | OptiMOS-T2 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | IPB45N04S4L08ATMA1 IPB45N04S4L08XT SP000711444 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | OptiMOS | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 18 ns | - | - |
| Rise Time | 8 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 45 A | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Rds On Drain Source Resistance | 7.6 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Qg Gate Charge | 23 nC | - | - |