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IPB45N04S4L-08

IPB45N04S4L-08
Mfr. #:
IPB45N04S4L-08
Fabricante:
Rochester Electronics, LLC
Descripción:
MOSFET N-Ch 40V 45A D2PAK-2 OptiMOS-T2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB45N04S4L-08 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS-T2
embalaje
Carrete
Alias ​​de parte
IPB45N04S4L08ATMA1 IPB45N04S4L08XT SP000711444
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
45 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
18 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
45 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Resistencia a la fuente de desagüe de Rds
7.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
11 ns
Tiempo de retardo de encendido típico
4 ns
Qg-Gate-Charge
23 nC
Tags
IPB45N, IPB45, IPB4, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 45A 3-Pin(2+Tab) TO-263 T/R
***o-Tech
MOSFET N-Ch 45A 40V OptiMOS-T2 TO263
***i-Key Marketplace
OPTLMOS N-CHANNEL POWER MOSFET
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ical
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) D2PAK T/R
***et
N-KANAL POWER MOS
*** Source Electronics
Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 40V 75A D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***eco
Transistor MOSFET N Channel 40 Volt 120 Amp 3-Pin 2+ Tab D2pak
***(Formerly Allied Electronics)
MOSFET, N Ch., Automotive, 40V, 120A, 5.5 MOHM, 68 NC QG, D2-PAK, Pb-Free
***ure Electronics
Single N-Channel 75 V 5.5 mOhm 68 nC HEXFET® Power Mosfet - D2PAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 140 W
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:120mJ; Capacitance Ciss Typ:3000pF; Current Id Max:75A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:470A; Reverse Recovery Time trr Typ:23ns; SMD Marking:F4104; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ineon SCT
40V, N-Ch, 6.2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 40V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
***et Europe
Transistor MOSFET N-CH 40V 70A 3-Pin TO-263 T/R
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***inecomponents.com
30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET
***et
TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***el Electronic
Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603
***(Formerly Allied Electronics)
IRL8113SPBF N-channel MOSFET Transistor, 105 A, 30 V, 3-Pin D2PAK
***ure Electronics
Single N-Channel 30 V 110 W 23 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 30V 105A 3-Pin(2+Tab) D2PAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:105A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 105A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:105A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:420A; Power Dissipation:110W; Power, Pd:110W; Resistance, Rds on @ Vgs = 10V:0.006ohm; Thermal Resistance, Junction to Case A:1.32°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.25V
***ical
Trans MOSFET N-CH 40V 16.1A 3-Pin(2+Tab) D2PAK T/R
***ark
TAPE REEL / 40V, 50A, 7.0 M OHMS, NCH POWER TRENCH MOSFET
***et
N-Channel 40V 16.1A (Ta), 50A (Tc) 3.1W (Ta), 66W (Tc) Surface Mount D²PAK (TO-263AB)
***emi
40V N-Channel PowerTrench® MOSFET
***i-Key Marketplace
MOSFET N-CH 40V 16.1A/50A TO263
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Parte # Mfg. Descripción Valores Precio
IPB45N04S4L08ATMA1
DISTI # IPB45N04S4L08ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 45A TO263-3-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB45N04S4L08ATMA1
    DISTI # IPB45N04S4L-08    		Infineon Technologies AGTrans MOSFET N-CH 40V 45A 3-Pin(2+Tab) TO-263 T/R - Bulk (Alt: IPB45N04S4L-08)
    RoHS: Not Compliant
    Min Qty: 834
    Container: Bulk    		Americas - 0
    • 8340:$0.3809
    • 4170:$0.3879
    • 2502:$0.4009
    • 1668:$0.4159
    • 834:$0.4319
    IPB45N04S4L08ATMA1
    DISTI # IPB45N04S4L08ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 40V 45A 3-Pin(2+Tab) TO-263 T/R - Bulk (Alt: IPB45N04S4L08ATMA1)
    Min Qty: 834
    Container: Bulk    		Americas - 0
    • 8340:$0.3809
    • 4170:$0.3879
    • 2502:$0.4009
    • 1668:$0.4159
    • 834:$0.4319
    IPB45N04S4L-08
    DISTI # 726-IPB45N04S4L-08    		Infineon Technologies AGMOSFET N-Ch 40V 45A D2PAK-2 OptiMOS-T2
    RoHS: Compliant    		0
      IPB45N04S4L08ATMA1
      DISTI # N/A      		Infineon Technologies AGMOSFET N-CHANNEL_30/40V0
        IPB45N04S4L-08Infineon Technologies AGPower Field-Effect Transistor, 45A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		3000
        • 1000:$0.4000
        • 500:$0.4200
        • 100:$0.4300
        • 25:$0.4500
        • 1:$0.4900
        IPB45N04S4L08ATMA1Infineon Technologies AGPower Field-Effect Transistor, 45A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263
        RoHS: Compliant        		22000
        • 1000:$0.4000
        • 500:$0.4200
        • 100:$0.4300
        • 25:$0.4500
        • 1:$0.4900
        Imagen Parte # Descripción
        IPB45N06S409ATMA2

        Mfr.#: IPB45N06S409ATMA2

        OMO.#: OMO-IPB45N06S409ATMA2

        		 MOSFET N-Ch 60V 45A D2PAK-2
        IPB45N06S4L08ATMA1

        Mfr.#: IPB45N06S4L08ATMA1

        OMO.#: OMO-IPB45N06S4L08ATMA1

        		 MOSFET N-CHANNEL_55/60V
        IPB45N06S3L-13

        Mfr.#: IPB45N06S3L-13

        OMO.#: OMO-IPB45N06S3L-13

        		 MOSFET N-Ch 55V 45A D2PAK-2
        IPB45N06S409ATMA2

        Mfr.#: IPB45N06S409ATMA2

        OMO.#: OMO-IPB45N06S409ATMA2-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 60V 45A TO263-3
        IPB45N04S4L-08

        Mfr.#: IPB45N04S4L-08

        OMO.#: OMO-IPB45N04S4L-08-1190

        		 MOSFET N-Ch 40V 45A D2PAK-2 OptiMOS-T2
        IPB45N04S4L08ATMA1

        Mfr.#: IPB45N04S4L08ATMA1

        OMO.#: OMO-IPB45N04S4L08ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 45A TO263-3-2
        IPB45N06S4-09

        Mfr.#: IPB45N06S4-09

        OMO.#: OMO-IPB45N06S4-09-1190

        		 MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2
        IPB45N06S409ATMA1

        Mfr.#: IPB45N06S409ATMA1

        OMO.#: OMO-IPB45N06S409ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 60V 45A TO263-3
        IPB45N06S4L08ATMA1

        Mfr.#: IPB45N06S4L08ATMA1

        OMO.#: OMO-IPB45N06S4L08ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 60V 45A TO263-3
        IPB45N06S4L08ATMA2

        Mfr.#: IPB45N06S4L08ATMA2

        OMO.#: OMO-IPB45N06S4L08ATMA2-1190

        		 Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R - Bulk (Alt: IPB45N06S4L08ATMA2)
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de IPB45N04S4L-08 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,60 US$
        0,60 US$
        10
        0,57 US$
        5,70 US$
        100
        0,54 US$
        54,00 US$
        500
        0,51 US$
        255,00 US$
        1000
        0,48 US$
        480,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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