IHW30N160R2 vs IHW30N160R2FKSA1 vs IHW30N160R2 H30R1602

 
PartNumberIHW30N160R2IHW30N160R2FKSA1IHW30N160R2 H30R1602
DescriptionIGBT Transistors RC-IGBT MONO DIODE 1600V 30AIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1600 V1600 V-
Collector Emitter Saturation Voltage1.8 V1.8 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation312 W312 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Series600V TRENCHSTOP600V TRENCHSTOP-
PackagingTubeTube-
Height20.95 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240240-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIHW30N160R2FKSA1 IHW3N16R2XK SP000273701IHW30N160R2 IHW3N16R2XK SP000273701-
Unit Weight1.340411 oz0.191185 oz-
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