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IHW30N160R2

IHW30N160R2
Mfr. #:
IHW30N160R2
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IHW30N160R2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1600 V
Voltaje de saturación colector-emisor:
1.8 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
312 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
600V TRENCHSTOP
Embalaje:
Tubo
Altura:
20.95 mm
Longitud:
15.9 mm
Ancho:
5.3 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IHW30N160R2FKSA1 IHW3N16R2XK SP000273701
Unidad de peso:
1.340411 oz
Tags
IHW30N160R2, IHW30N16, IHW30N1, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    J***a
    J***a
    MX

    Excellent product, new and original same as description, highly recommended seller.

    2019-01-24
    O***v
    O***v
    RU

    Works well. Do not forget to remove the film from the sensor after soldering the connector, the flux fills the sensor.

    2019-02-06
    E***l
    E***l
    MX

    Good service. And product thank you

    2019-05-31
Parte # Mfg. Descripción Valores Precio
IHW30N160R2FKSA1
DISTI # V36:1790_06378532		Infineon Technologies AGTrans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		8013
  • 500:$4.0500
  • 250:$4.5550
  • 100:$4.8410
  • 50:$5.1440
  • 25:$5.4509
  • 10:$5.7630
  • 1:$7.5163
IHW30N160R2FKSA1
DISTI # IHW30N160R2FKSA1-ND		Infineon Technologies AGIGBT 1600V 60A 312W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
  • 240:$4.3952
IHW30N160R2FKSA1
DISTI # 32439532		Infineon Technologies AGTrans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		8013
  • 500:$4.0500
  • 250:$4.5550
  • 100:$4.8410
  • 50:$5.1440
  • 25:$5.4509
  • 10:$5.7630
  • 3:$6.8330
IHW30N160R2XK
DISTI # IHW30N160R2FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.6KV 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW30N160R2FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1200:$2.6900
  • 2400:$2.6900
  • 720:$2.7900
  • 480:$2.8900
  • 240:$2.9900
IHW30N160R2FKSA1
DISTI # 13T9432		Infineon Technologies AGIGBT+ DIODE, 1.6KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:312W,Collector Emitter Voltage V(br)ceo:1.6kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 500:$3.6000
  • 250:$4.0100
  • 100:$4.2200
  • 50:$4.4400
  • 25:$4.6600
  • 10:$4.8800
  • 1:$5.7400
IHW30N160R2FKSA1
DISTI # 726-IHW30N160R2FKSA1		Infineon Technologies AGIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
RoHS: Compliant		0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IHW30N160R2
DISTI # 726-IHW30N160R2		Infineon Technologies AGIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
RoHS: Compliant		0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IHW30N160R2FKSA1
DISTI # 7528334P		Infineon Technologies AGTRANSISTOR IGBT N-CH 1.6KV 60A TO247, TU1460
  • 10:£3.3100
IHW30N160R2FKSA1
DISTI # 7528334		Infineon Technologies AGTRANSISTOR IGBT N-CH 1.6KV 60A TO247, EA998
  • 10:£3.3100
  • 1:£5.5800
IHW30N160R2FKSA1
DISTI # 1832388		Infineon Technologies AGIGBT+ DIODE,1600V,30A,TO247
RoHS: Compliant		4500
  • 500:$5.4700
  • 250:$6.1000
  • 100:$6.4300
  • 10:$7.4300
  • 1:$8.7400
IHW30N160R2FKSA1
DISTI # 1832388		Infineon Technologies AGIGBT+ DIODE,1600V,30A,TO247
RoHS: Compliant		4590
  • 500:£2.8300
  • 250:£3.1500
  • 100:£3.3200
  • 10:£3.8400
  • 1:£4.9900
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IHW30N160R2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,68 US$
5,68 US$
10
4,83 US$
48,30 US$
100
4,18 US$
418,00 US$
250
3,97 US$
992,50 US$
500
3,56 US$
1 780,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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