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| PartNumber | IHW25N120E1XKSA1 | IHW25N120E | IHW25N120E1 |
| Description | IGBT Transistors IGBT PRODUCTS | IGBT, SINGLE, 1.2KV, 50A, TO-247 | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Pd Power Dissipation | 231 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 50 A | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | IHW25N120E1 SP001391910 | - | - |
| Unit Weight | 0.211644 oz | - | - |