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IHW25N120E1XKSA1

IHW25N120E1XKSA1
Mfr. #:
IHW25N120E1XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IHW25N120E1XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
50 A
Pd - Disipación de energía:
231 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
50 A
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Parte # Alias:
IHW25N120E1 SP001391910
Unidad de peso:
0.211644 oz
Tags
IHW25N120E, IHW25N, IHW25, IHW2, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 1.2Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.5V; Power Dissipation Pd:231W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
The new RC-E IGBTs are cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineons proven quality in RC IGBTs and meets all the needs of so switching applications, including attractive pricing compared to other general purpose IGBTs. | Summary of Features: Low E off and V ce(sat); Designed for so switching applications; Optimized for performance with switching frequencies from 18kHz40kHz; Most commonly used blocking voltage, 1200V | Benefits: Price versus performance leader for cost-e ective designs; Low losses help designs meet energy efficiency standards; Drop-in replacement for existing designs; Soft switching for good EMI behavior | Target Applications: Low- to mid-range induction cookers
Parte # Mfg. Descripción Valores Precio
IHW25N120E1XKSA1
DISTI # V99:2348_16563132		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube239
  • 500:$2.4840
  • 250:$2.6890
  • 100:$2.9190
  • 10:$3.3630
  • 1:$4.3483
IHW25N120E1XKSA1
DISTI # V36:1790_16563132		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.7530
  • 120000:$1.7570
  • 24000:$2.4100
  • 2400:$3.7460
  • 240:$3.9800
IHW25N120E1XKSA1
DISTI # IHW25N120E1XKSA1-ND		Infineon Technologies AGIGBT NPT/TRENCH 1200V 50A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		155In Stock
  • 2640:$2.1064
  • 720:$2.6225
  • 240:$3.0807
  • 25:$3.5548
  • 10:$3.7600
  • 1:$4.1900
IHW25N120E1XKSA1
DISTI # 31691675		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube239
  • 3:$4.3483
IHW25N120E1XKSA1
DISTI # IHW25N120E1XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube - Rail/Tube (Alt: IHW25N120E1XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.8900
  • 2400:$1.8900
  • 480:$1.9900
  • 960:$1.9900
  • 240:$2.0900
IHW25N120E1XKSA1
DISTI # SP001391910		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube (Alt: SP001391910)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.4900
  • 500:€1.5900
  • 100:€1.6900
  • 25:€1.7900
  • 50:€1.7900
  • 10:€1.8900
  • 1:€2.0900
IHW25N120E1XKSA1
DISTI # 34AC1619		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:231W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes2146
  • 500:$2.5100
  • 250:$2.8100
  • 100:$2.9600
  • 50:$3.1100
  • 25:$3.2600
  • 10:$3.4100
  • 1:$4.0200
IHW25N120E1XKSA1
DISTI # 726-IHW25N120E1XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		2304
  • 1:$3.9800
  • 10:$3.3800
  • 100:$2.9300
  • 250:$2.7800
  • 500:$2.4900
IHW25N120E1XKSA1
DISTI # 2781025		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-247
RoHS: Compliant		2146
  • 100:$3.2400
  • 10:$3.6500
  • 1:$3.9100
IHW25N120E1XKSA1
DISTI # 2781025		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-2472146
  • 500:£1.9400
  • 250:£2.1600
  • 100:£2.2800
  • 10:£2.6400
  • 1:£3.4600
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 IGBT TRENCH 650V 40A TO247
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de IHW25N120E1XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,98 US$
3,98 US$
10
3,38 US$
33,80 US$
100
2,93 US$
293,00 US$
250
2,78 US$
695,00 US$
500
2,49 US$
1 245,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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