 | |  | |
| PartNumber | FS50R12W2T4_B11 | FS50R12W2T4 | FS50R12W2T4B11BOMA1 |
| Description | IGBT Modules IGBT 1200V 50A | IGBT Modules IGBT 1200V 50A | MOD IGBT LOW PWR EASY2B-2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.15 V | 1.85 V | - |
| Continuous Collector Current at 25 C | 83 A | 83 A | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Pd Power Dissipation | 335 W | 335 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | SMD/SMT | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 15 | 15 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FS50R12W2T4B11BOMA1 SP000546148 | FS50R12W2T4BOMA1 SP000404114 | - |
| Unit Weight | 1.375685 oz | 1.375685 oz | - |
| RoHS | - | Y | - |
| Configuration | - | IGBT-Inverter | - |
| Package / Case | - | Module | - |