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FS50R12W2T4_B11

FS50R12W2T4_B11
Mfr. #:
FS50R12W2T4_B11
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules IGBT 1200V 50A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS50R12W2T4_B11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
Producto:
Módulos de silicio IGBT
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.15 V
Corriente continua del colector a 25 C:
83 A
Corriente de fuga puerta-emisor:
100 nA
Pd - Disipación de energía:
335 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
15
Subcategoría:
IGBT
Parte # Alias:
FS50R12W2T4B11BOMA1 SP000546148
Unidad de peso:
1.375685 oz
Tags
FS50R12W, FS50R12, FS50R1, FS50R, FS50, FS5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:18Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPACK 2B 1200 V / 50 A sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups
Parte # Mfg. Descripción Valores Precio
FS50R12W2T4B11BOMA1
DISTI # FS50R12W2T4B11BOMA1-ND		Infineon Technologies AGMOD IGBT LOW PWR EASY2B-2
RoHS: Compliant
Min Qty: 15
Container: Tray		Temporarily Out of Stock
  • 15:$49.0293
FS50R12W2T4_B11
DISTI # SP000546148		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€37.2900
  • 500:€38.1900
  • 100:€39.2900
  • 50:€40.5900
  • 25:€42.0900
  • 10:€46.2900
  • 1:€57.2900
FS50R12W2T4_B11
DISTI # SP000546148		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€35.7900
  • 500:€38.3900
  • 100:€39.7900
  • 50:€41.2900
  • 25:€42.9900
  • 10:€44.7900
  • 1:€48.7900
FS50R12W2T4B11BOMA1
DISTI # FS50R12W2T4B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FS50R12W2T4B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
  • 150:$38.0900
  • 90:$38.9900
  • 60:$39.9900
  • 30:$40.9900
  • 15:$41.5900
FS50R12W2T4B11BOMA1
DISTI # FS50R12W2T4B11BOMA1		Infineon Technologies AGLOW POWER EASY - Bulk (Alt: FS50R12W2T4B11BOMA1)
RoHS: Compliant
Min Qty: 9
Container: Bulk		Americas - 0
  • 90:$37.4900
  • 45:$38.0900
  • 27:$39.4900
  • 18:$40.9900
  • 9:$42.4900
FS50R12W2T4_B11
DISTI # 84R7223		Infineon Technologies AGIGBT Module,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:335W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:18Pins,Product Range:- RoHS Compliant: Yes0
    FS50R12W2T4_B11
    DISTI # 641-FS50R12W2T4_B11    		Infineon Technologies AGIGBT Modules IGBT 1200V 50A1
    • 1:$52.1900
    • 5:$51.0200
    • 10:$49.0200
    • 25:$47.4500
    • 50:$47.4400
    • 100:$43.9700
    FS50R12W2T4B11BOMA1Infineon Technologies AG 
    RoHS: Not Compliant    		5
    • 1000:$38.8400
    • 500:$40.8900
    • 100:$42.5700
    • 25:$44.3900
    • 1:$47.8100
    FS50R12W2T4_B11
    DISTI # 1833612    		Infineon Technologies AGIGBT, L POWER, 1200V, 50A, EASYPACK
    RoHS: Compliant    		0
    • 250:$65.6400
    • 100:$67.5900
    • 50:$72.9200
    • 25:$72.9500
    • 10:$75.3500
    • 5:$78.4300
    • 1:$80.2300
    FS50R12W2T4_B11
    DISTI # 1833612    		Infineon Technologies AGIGBT, L POWER, 1200V, 50A, EASYPACK
    RoHS: Compliant    		0
    • 50:£33.2300
    • 10:£36.9300
    • 5:£39.7100
    • 1:£40.6200
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    Disponibilidad
    Valores:
    16
    En orden:
    1999
    Ingrese la cantidad:
    El precio actual de FS50R12W2T4_B11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    52,19 US$
    52,19 US$
    5
    51,02 US$
    255,10 US$
    10
    49,02 US$
    490,20 US$
    25
    47,45 US$
    1 186,25 US$
    50
    47,44 US$
    2 372,00 US$
    100
    43,97 US$
    4 397,00 US$
    250
    42,70 US$
    10 675,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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