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| PartNumber | FQPF19N10 | FQPF19N10,FQPF19N10L | FQPF19N10C |
| Description | MOSFET 100V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 13.6 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.07 mm | - | - |
| Length | 10.36 mm | - | - |
| Series | FQPF19N10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 65 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 150 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 7.5 ns | - | - |
| Part # Aliases | FQPF19N10_NL | - | - |
| Unit Weight | 0.080072 oz | - | - |