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FQPF19N10

FQPF19N10
Mfr. #:
FQPF19N10
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 100V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQPF19N10 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
13.6 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
38 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.07 mm
Longitud:
10.36 mm
Serie:
FQPF19N10
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.9 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
10 S
Otoño:
65 ns
Tipo de producto:
MOSFET
Hora de levantarse:
150 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
7.5 ns
Parte # Alias:
FQPF19N10_NL
Unidad de peso:
0.080072 oz
Tags
FQPF19N1, FQPF19, FQPF1, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail
***Semiconductor
N-Channel QFET® MOSFET 100V, 13.6A, 100mΩ
***i-Key
MOSFET N-CH 100V 13.6A TO-220F
***ser
MOSFETs 100V N-Channel QFET
***inecomponents.com
100V N-Channel QFET®
***ark
Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:100V; Operating Temperature Max:175�C; Product Range:QFET Series; Automotive Qualification Standard:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Parte # Mfg. Descripción Valores Precio
FQPF19N10
DISTI # V99:2348_06298498		ON Semiconductor100V N-CHANNEL QFET1000
  • 25000:$0.4224
  • 10000:$0.4319
  • 2000:$0.4534
  • 1000:$0.5162
  • 500:$0.6585
  • 100:$0.7521
  • 10:$1.0895
  • 1:$1.2826
FQPF19N10
DISTI # V36:1790_06298498		ON Semiconductor100V N-CHANNEL QFET0
    FQPF19N10L
    DISTI # FQPF19N10L-ND    		ON SemiconductorMOSFET N-CH 100V 13.6A TO-220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Limited Supply - Call
      FQPF19N10
      DISTI # FQPF19N10-ND      		ON SemiconductorMOSFET N-CH 100V 13.6A TO-220F
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube      		Temporarily Out of Stock
      • 1000:$0.5919
      FQPF19N10
      DISTI # 31435398      		ON Semiconductor100V N-CHANNEL QFET1000
      • 25000:$0.4224
      • 10000:$0.4319
      • 2000:$0.4534
      • 1000:$0.5162
      • 500:$0.6585
      • 100:$0.7521
      • 15:$0.9905
      FQPF19N10
      DISTI # FQPF19N10      		ON SemiconductorTrans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF19N10)
      RoHS: Compliant
      Min Qty: 50
      Container: Tube      		Americas - 3268
      • 500:$0.3849
      • 250:$0.3939
      • 150:$0.3989
      • 100:$0.4049
      • 50:$0.4069
      FQPF19N10
      DISTI # FQPF19N10      		ON SemiconductorTrans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: FQPF19N10)
      RoHS: Compliant
      Min Qty: 610
      Container: Bulk      		Americas - 0
      • 6100:$0.5059
      • 3050:$0.5179
      • 1830:$0.5249
      • 1220:$0.5319
      • 610:$0.5349
      FQPF19N10
      DISTI # FQPF19N10      		ON SemiconductorTrans MOSFET N-CH 100V 13.6A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF19N10)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
      • 1000:€0.4219
      • 500:€0.4319
      • 100:€0.4459
      • 50:€0.4559
      • 25:€0.5409
      • 10:€0.6519
      • 1:€0.8379
      FQPF19N10.
      DISTI # 60AC9682      		ON SemiconductorContinuous Drain Current Id:13.6A,Drain Source Voltage Vds:100V,Operating Temperature Max:175°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
      • 500:$0.3940
      • 250:$0.4040
      • 102:$0.4100
      • 52:$0.4160
      • 1:$0.4180
      FQPF19N10
      DISTI # 512-FQPF19N10      		ON SemiconductorMOSFET 100V N-Channel QFET
      RoHS: Compliant      		2437
      • 1:$1.1800
      • 10:$1.0100
      • 100:$0.7720
      • 500:$0.6820
      • 1000:$0.5390
      FQPF19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		1642
      • 1000:$0.5400
      • 500:$0.5700
      • 100:$0.5900
      • 25:$0.6200
      • 1:$0.6600
      FQPF19N10LFairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		1448
      • 1000:$0.5300
      • 500:$0.5500
      • 100:$0.5800
      • 25:$0.6000
      • 1:$0.6500
      FQPF19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		Europe - 600
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        		 LDO Voltage Regulators 800MA LDO LINEAR REG
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        		 Precision Potentiometers 7/8" WW 5Kohms 10 Turns
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        		 Aluminum Electrolytic Capacitors - Snap In 10000uF 50V 20% 85C
        LF347MX/NOPB

        Mfr.#: LF347MX/NOPB

        OMO.#: OMO-LF347MX-NOPB-TEXAS-INSTRUMENTS

        		 IC OPAMP JFET 4MHZ 14SOIC
        534B1502JC

        Mfr.#: 534B1502JC

        OMO.#: OMO-534B1502JC-VISHAY

        		 Precision Potentiometers 7/8" WW 5Kohms 10 Turns
        Disponibilidad
        Valores:
        Available
        En orden:
        1985
        Ingrese la cantidad:
        El precio actual de FQPF19N10 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,18 US$
        1,18 US$
        10
        1,01 US$
        10,10 US$
        100
        0,77 US$
        77,20 US$
        500
        0,68 US$
        341,00 US$
        1000
        0,54 US$
        539,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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