FDS8962C vs FDS8962 vs FDS8962C-NL

 
PartNumberFDS8962CFDS8962FDS8962C-NL
DescriptionMOSFET SO8 DUAL NCH & PCH POWER TRENCH MOSFET
ManufacturerON SemiconductorFairchild SemiconductorFAIRCHILD
Product CategoryMOSFETIC ChipsIC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance30 mOhms, 52 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR-
Height1.75 mm--
Length4.9 mm--
SeriesFDS8962CPowerTrenchR-
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min25 S, 10 S--
Fall Time3 ns, 9 ns--
Product TypeMOSFET--
Rise Time5 ns, 13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns, 14 ns--
Typical Turn On Delay Time8 ns, 7 ns--
Part # AliasesFDS8962C_NL--
Unit Weight0.006596 oz--
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-N and P-Channel-
Power Max-900mW-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-575pF @ 15V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-7A, 5A-
Rds On Max Id Vgs-30 mOhm @ 7A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-26nC @ 10V-
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