FDMC8884-F126 vs FDMC8884 vs FDMC8884 QFN8

 
PartNumberFDMC8884-F126FDMC8884FDMC8884 QFN8
DescriptionMOSFET 30V N-CHAN 9A 19mOhmMOSFET 30V N-Channel Power Trench
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePower-33-8Power-33-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current9 A9 A-
Rds On Drain Source Resistance19 mOhms19 mOhms-
Qg Gate Charge5 nC, 10 nC5 nC, 10 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation18 W2.3 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.8 mm0.8 mm-
Length3.3 mm3.3 mm-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesFDMC8884_F126--
Vgs Gate Source Voltage-20 V-
Channel Mode-Enhancement-
Tradename-PowerTrench-
Series-FDMC8884-
Fall Time-2 ns-
Rise Time-2 ns-
Typical Turn Off Delay Time-15 ns-
Typical Turn On Delay Time-6 ns-
Unit Weight-0.007055 oz-
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