FDFMA2P029Z vs FDFMA2P029Z-F106 vs FDFMA2P029Z , 1N5226B-TA

 
PartNumberFDFMA2P029ZFDFMA2P029Z-F106FDFMA2P029Z , 1N5226B-TA
DescriptionMOSFET -20V P-Channel PT MFET SCHOTTKYMOSFET -20V-3.1A95OHMpchPWR TRNCHmosfetSCHTKYdio
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMicroFET-6MicroFET-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.1 A3.1 A-
Rds On Drain Source Resistance95 mOhms60 mOhms-
Vgs Gate Source Voltage20 V12 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.4 W1.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height0.75 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDFMA2P029ZFDFMA2P029Z-
Transistor Type1 P-Channel1 P-Channel-
Width2 mm--
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min- 11 S- 11 S-
Fall Time11 ns36 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time37 ns37 ns-
Typical Turn On Delay Time13 ns13 ns-
Unit Weight0.001411 oz--
Vgs th Gate Source Threshold Voltage-1.5 V-
Qg Gate Charge-10 nC-
Part # Aliases-FDFMA2P029Z_F106-
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