FDD850N10L vs FDD850N10LD vs FDD8505

 
PartNumberFDD850N10LFDD850N10LDFDD8505
DescriptionMOSFET 100V N-Channel PowerTrench MOSFETMOSFET 100V, 15.7A, 75mOhm N-Channel BoostPakElectronic Component
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-5-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current15.7 A15.7 A-
Rds On Drain Source Resistance64 mOhms75 mOhms-
Qg Gate Charge22.2 nC22.2 nC-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation50 W42 W-
ConfigurationSingleSingle-
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFDD850N10LFDD850N10LD-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min31 S31 S-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.009184 oz0.009184 oz-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Fall Time-8 ns-
Rise Time-21 ns-
Typical Turn Off Delay Time-27 ns-
Typical Turn On Delay Time-17 ns-
Top