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| PartNumber | FDB9503L-F085 | FDB9506L-F085 | FDB9509L-F085 |
| Description | MOSFET P-Channel LogicLevel PowerTrench MOSFET | MOSFET PMOS D2PAK 40V 3.6 MOHM | MOSFET PMOS D2PAK 40V 110X72 MIL |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263AB-3 | D2PAK-3 | D2PAK-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - 40 V | - 40 V |
| Id Continuous Drain Current | 110 A | - 110 A | - 83 A |
| Rds On Drain Source Resistance | 2 mOhms | 3.6 mOhms | 8 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - 3 V | - 1 V |
| Vgs Gate Source Voltage | 16 V | 16 V | - 10 V |
| Qg Gate Charge | 255 nC | 126 nC | 48 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 333 W | 176 W | 93.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel Power MOSFET |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor | ON Semiconductor |
| Fall Time | 310 ns | 140 ns | 57 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 86 ns | 9 ns | 4 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 700 ns | 474 ns | 200 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns | 9 ns |
| Part # Aliases | FDB9503L_F085 | - | - |
| Unit Weight | 0.046296 oz | - | - |